BAS86 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

Features
For general purpose applications.
This diode features low turn-on voltage. This device are
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type
designation BAT86.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Green
BAS86
Small-Signal Diode
Schottky Diode
Maximum Ratings and Thermal Characteristics
(T_A=25^oC unless otherwise noted.)
Parameter
Symbol
Value
Continuous reverse voltage
V_R
50
Forward continuous current at T_amb=25^oC
Repetitive peak forward current
at tp<1s, υ<0.5, T_amb=25^oC
Power dissipation at T_amb=25^oC
I_F
200 ⁽¹⁾
I_FRM
500 ⁽¹⁾
P_tot
200 ⁽¹⁾
Thermal resistance junction to ambient air
R_θJA
300 ⁽¹⁾
Junction temperature
T_j
125
Ambient operating temperature range
T_amb
-65 to +125
Storage temperature range
T_S
-65 to +150
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
Unit
Volts
mA
mA
mW
o_C/W
o_C
o_C
o_C
699