BAS85 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Features
For general purpose applications.
This diode features low turn-on voltage.
The devices are protected by a PN junction guard ring against
excessive voltage, such as electrostatic discharges.
This diode is also available in the DO-35 case with type
designation BAT85.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 grams
Cathode Band Color: Green
BAS85
Small-Signal Diode
Schottky Diode
Maximum Ratings and Thermal Characteristics
(T_A=25^oC unless otherwise noted.)
Parameter
Symbol
Value
Continuous reverse voltage
Forward continuous current at T_amb=25^oC
Peak forward current at T_amb=25^oC
Surge forward current at tp<1s, T_amb=25^oC
Power dissipation at T_amb=65^oC
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
V_R
I_F
I_FM
I_FSM
P_tot
R_θJA
T_j
T_S
30
200 ⁽¹⁾
300 ⁽¹⁾
600 ⁽¹⁾
200 ⁽¹⁾
430 ⁽¹⁾
125
-55 to +150
Electrical Characteristics
(T_J=25^oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Reverse breakdown voltage
V_(BR)R
I_R=10uA (pulsed)
Leakage current
I_R
V_R=25V
Forward voltage
Pulse Test tp < 300us
I_F=0.1mA
V_F
I_F=1mA
I_F=10mA
I =30mA
F
I_F=100mA
Capacitance
C_tot
V_R=1V, f=1MHz
Reverse recovery time
t_rr
I_F=10mA, I_R=10mA,
I_R=1mA
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
698
Unit
Volts
mA
mA
mA
mW
o_C/W
o_C
o_C
Min.
30
-
-
-
-
-
-
-
-
Typ.
-
0.2
-
-
-
0.5
-
-
-
Max.
-
2
0.24
0.32
0.4
-
0.8
10
5
Unit
Volts
uA
Volt
pF
ns