BAS81 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diodes

Features
Integrated protection ring against static discharge
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
Applications
HF-Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 30 mg
Cathode Band Color: Black
BAS81 / 82 / 83
Small Signal Schottky Barrier Diodes
Absolute Maximum Ratings
Parameter
Reverse voltage
Test Condition
Peak forward surge current
Repetitive peak forward current
Forward current
t_p= 1 s
Part
BAS81
BAS82
BAS83
( T_amb=25^oC unless otherwise specified )
Symbol
Value Unit
V_R
40
V
V_R
50
V
V_R
60
V
I_FSM
500
mA
I_FRM
150
mA
I_F
30
mA
Thermal Characteristics
Parameter
Junction ambient
Junction temperature
Stroage temperature range
Test Condition
on PC board
50 mm X 50mm X 1.6mm
( T_amb=25^oC unless otherwise specified )
Symbol
Value
Unit
R_thJA
T_j
T_stg
320
K/W
125
o_C
-65 to +150
o_C
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Diode capacitance
Test Condition
I_F=0.1mA
I_F=1mA
I_F=15mA
V_R=V_RMax.
V_R=1V, f=1MHz
( T_amb=25^oC unless otherwise specified )
Symbol
Min.
Typ.
Max.
Unit
330
mV
V_F
410
mV
1
V
I_R
200
nA
C_D
1.6
pF
696