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2N7002KU_15 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – 60V N-Channel MOSFET | |||
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Main Product Characteristics
VDSS
60V
RDS(on) 3Ω(max.)
ID
0.3A
SOT-23
Features and Benefits
ï® Advanced MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® ESD Ratingï¼2000V HBM
ï® 150â operating temperature
ï® Lead free product
2N7002KU
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
0.3
1.2
0.63
60
± 20
-55 to +150
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ⤠10s) â£
Typ.
â
Max.
200
Units
A
W
V
V
°C
Units
â/W
www.goodark.com
Page 1 of 6
Rev.1.0
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