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| 2N7002KG8_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – 60V MOSFET | |||
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Main Product Characteristics
VDSS
60V
RDS(on) 7.5ohm(max.)
ID
A
Features and Benefits
ï® Advanced trench MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
ï® Lead free product
SOT-363
2N7002KG8
60V MOSFET
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
Unit
60
V
±20
V
0.115
A
0.8
A
0.38
W
-55 To 150
â
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
328
â/W
www.goodark.com
Page 1 of 5
Rev.1.1
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