2N7002KB_15 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – 60V N-Channel MOSFET

Main Product Characteristics
2N7002KB
60V N-Channel MOSFET
V_DSS
60V
R_DS(on) 2Ω(max.)
I_D
0.3A
Features and Benefits
SOT-23
Marking and Pin
Assignment
Schematic Diagram
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 ESD Rating：1000V HBM
 150℃ operating temperature
 Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
0.3
1.2
0.63
60
± 20
-55 to +150
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
Max.
200
Units
A
W
V
V
°C
Units
℃/W
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