1N914_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – Fast switching diode

Features
Silicon Epitaxial Planar Diode
For general purpose and switching
Mechanical Data
Case: DO-34, DO-35 Glass Case
Weight: approx. 0.13g
1N914
Small-Signal Diode
Fast Switching Diode
Maximum Ratings and Thermal Characteristics
(T_A=25^oC unless otherwise noted.)
Parameter
Symbol
Limit
Unit
Peak reverse voltage
Average rectified current
Power dissipation at T_amb=25^oC
Junction temperature
V
100
Volts
RM
I_F(AV)
75
mA
P_tot
500
mW
T_J
175
o_C
Electrical Characteristics
(T_J=25^oC unless otherwise noted.)
Parameter
Symbol
Forward voltage drop
V_F
Reverse current
I_R
Reverse recovery time
t_rr
Capacitance
C_tot
Test Condition
I_F=10mA
V_R=20V
V_R=75V
I_F=I_R=10mA, V_R=6V
R_L=100Ω,
to
I =1mA
rr
V_R=0, f=1.0MHz
Min.
Typ.
Max.
Unit
-
-
1.0
Volt
-
-
25
nA
-
-
5.0
uA
-
-
4.0
ns
-
-
4.0
pF
617