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1N914 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diode
Features
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
D IM
A
B
C
D
D IM E N S IO N S
in c h e s
mm
M in .
M ax.
M in .
M ax.
-
0 .11 4
-
2 .9
-
0 .0 7 5
-
1 .9
-
0 .0 1 7
-
0 .4 2
0 .6 3 0
-
1 6 .0
-
N o te
D IM
A
B
C
D
D IM E N S IO N S
in c h e s
mm
M in .
M ax.
M in .
M ax.
-
0 .1 5 4
-
3 .9
-
0 .0 7 5
-
1 .9
-
0 .0 2 0
-
0 .5 2
1 .0 8 3
-
2 7 .5 0
-
N o te
Electrical Characteristics
Type
Peak
reverse
voltage
Max.
aver.
rectified
current
Max.
power
dissip.
at 25
Max. Max. forward
junction voltage drop
temper-
ature
Max. reverse
current
Max. reverse recovery time
VRM V
IO mA Ptot mW
Tj
1N914
100
75
500
200
1N4149 1) 100
150
500
200
1N4150
50
200
500
200
1N4152
40
150
400
175
1N4153
75
150
400
175
1N4154
35
150 2)
500
200
1N4447 1) 100
150
500
200
1N4449 1) 100
150
500
200
1N4450
40
150
400
175
1N4451
40
150
400
175
1N4453
30
150
400
175
VF V
1.0
at
IF mA
10
In nA
25
at
VR V
20
1.0
10
25
20
1.0 200 100 50
0.55 0.10 50
30
0.55 0.10 50
50
1.0 0.10 100 25
1.0
20
25
20
1.0
30
25
20
0.54 0.50 50
30
0.50 0.10 50
30
0.55 0.01 50
20
trr nS Conditions
Max. 4.0
Max. 4.0
Max. 4.0
Max. 2.0
Max. 2.0
Max. 2.0
Max. 4.0
Max. 4.0
Max. 4.0
Max. 10
-
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=IR=10 to 200 mA, to 0.1 IF
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
I =10mA, V =6V, R =100 , to I =1mA
F
R
L
R
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=IR=10mA, to IR=1mA
I =I =10mA, to I =1mA
FR
R
-
1N4454
75
150
400
175
1.0
10 100 50 Max. 4.0
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
Ptot=300mW
TJ=175
TS=-65 to +175
Rtha 0.4K/mW
1
IF=IR=10mA, to IR=1mA