1N5711 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

Features
For general purpose applications
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and low logic
level applications.
This diode is also available in the MiniMELF case with type
designation LL5711 and LL6263.
1N5711 and 1N6263
Small-Signal Diode
Schottky Diodes
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Peak inverse voltage
Power dissipation (Infinite heatsink)
1N5711
1N6263
Maximum single cycle surge 10 us square wave
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
V_RRM
P_tot
I_FSM
R_θJA
T
j
T_S
70
60
400 ⁽¹⁾
2.0
0.3 ⁽¹⁾
125 ⁽¹⁾
-55 to +150 ⁽¹⁾
Unit
Volts
mW
Amps
o_C/mW
o_C
o_C
Electrical Characteristics
(T =25oC unless otherwise noted.)
J
Parameter
Symbol
Test Condition
Min.
Typ.
Reverse breakdown voltage
1N5711
1N6263
V
(BR)R
I_R=10uA
70
-
60
-
Leakage current
I_R
V_R=50V
-
-
Forward voltage drop
V_F
I_F=1mA
I_F=15mA
-
-
-
-
Junction capacitance
C_tot
V_R=0V, f=1MHz
-
-
Reverse recovery time
t_rr
I_F=I_R=5mA,
recovery to 0.1I_R
-
-
Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
673
Max.
-
-
200
0.41
1.0
2.2
1
Unit
Volts
nA
Volt
pF
ns