1N4448_15 Datasheet, PDF (1/4 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – High-speed switching diode

1N4448
Small-Signal Diode - Fast Switching Rectifier
Reverse Voltage 100V Forward Current 150mA
Features
‹ Silicon Epitaxial Planar Diode
‹ Fast switching diode
‹ This diode is also available in other case styles including the
MiniMELF case with the type designation LL4448.
Mechanical Data
‹ Case: DO-35 Glass Case
‹ Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(T_A=25^oC unless otherwise noted.)
Parameter
Symbol
Limit
Reverse voltage
V_R
75
Peak reverse voltage
Average rectified current
half wave rectification with resistive load
at T_amb=25^oC and f>50Hz ⁽¹⁾
Surge forward current at t<1s and T_j=25^oC
V_RM
I
F(AV)
I_FSM
100
150
500
Power dissipation at T_amb=25^oC ⁽¹⁾
P_tot
500
Thermal resistance junction to ambient air ⁽¹⁾
R_θJA
350
Junction temperature
T_j
175
Storage temperature range
T_S
-65 to +175
Notes: 1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Unit
Volts
Volts
mA
mA
mW
o_C/W
o_C
o_C
388