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1N4151_15 Datasheet, PDF (1/3 Pages) GOOD-ARK Electronics – Small-Signal Diode Fast Switching Diode
Features
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case styles including the
MiniMELF case with the type designation LL4151.
Mechanical Data
Case: DO-34, DO-35 Glass Case
Weight: approx. 0.13g
1N4151
Small-Signal Diode
Fast Switching Diode
Maximum Ratings and Thermal Characteristics
(T =25oC unless otherwise noted.)
A
Parameter
Symbol
Limit
Reverse voltage
Peak reverse voltage
Average rectified current
half wave rectification with resistive load at
Tamb=25oC and f>50Hz (1)
Surge forward current at t<1s and Tj=25oC
Power dissipation at Tamb=25oC (1)
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
VR
50
VRM
75
I
F(AV)
150
IFSM
500
Ptot
500
RθJA
350
Tj
175
TS
-65 to +175
Unit
Volts
Volts
mA
mA
mW
oC/W
oC
oC
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Reverse breakdown voltage
V(BR)R
IR=5uA (pulsed)
75
-
-
Forward voltage
Leakage current
Capacitance
Reverse recovery time
Rectification efficiency
VF
IF=50mA
-
-
1.0
IR
VR=50V
VR=50V, TJ=150OC
-
-
50
50
Ctot
VF=VR=0V
-
-
2.0
trr
IF=10mA to IR=10mA
to I =1mA
R
IF=10mA to IR=1mA
VR=6V, RL=100Ω
-
-
4.0
-
-
2.0
ην
f=100MHz, VRF=2V
0.45
-
-
Notes: 1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
619
Unit
Volts
Volt
nA
uA
pF
ns
-