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1N4151_15 Datasheet, PDF (1/3 Pages) GOOD-ARK Electronics – Small-Signal Diode Fast Switching Diode | |||
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Features
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case styles including the
MiniMELF case with the type designation LL4151.
Mechanical Data
Case: DO-34, DO-35 Glass Case
Weight: approx. 0.13g
1N4151
Small-Signal Diode
Fast Switching Diode
Maximum Ratings and Thermal Characteristics
(T =25oC unless otherwise noted.)
A
Parameter
Symbol
Limit
Reverse voltage
Peak reverse voltage
Average rectified current
half wave rectification with resistive load at
Tamb=25oC and f>50Hz (1)
Surge forward current at t<1s and Tj=25oC
Power dissipation at Tamb=25oC (1)
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
VR
50
VRM
75
I
F(AV)
150
IFSM
500
Ptot
500
RθJA
350
Tj
175
TS
-65 to +175
Unit
Volts
Volts
mA
mA
mW
oC/W
oC
oC
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Reverse breakdown voltage
V(BR)R
IR=5uA (pulsed)
75
-
-
Forward voltage
Leakage current
Capacitance
Reverse recovery time
Rectification efficiency
VF
IF=50mA
-
-
1.0
IR
VR=50V
VR=50V, TJ=150OC
-
-
50
50
Ctot
VF=VR=0V
-
-
2.0
trr
IF=10mA to IR=10mA
to I =1mA
R
IF=10mA to IR=1mA
VR=6V, RL=100â¦
-
-
4.0
-
-
2.0
ην
f=100MHz, VRF=2V
0.45
-
-
Notes: 1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
619
Unit
Volts
Volt
nA
uA
pF
ns
-
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