1N4150_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – High-speed switching diode

Features
Silicon Epitaxial Planar Diode
For general purpose and switching
This diode is also available in other case styles including the
MiniMELF case with the type designation LL4150.
Mechanical Data
Case: DO-34, DO-35 Glass Case
Weight: approx. 0.13g
1N4150
Small-Signal Diode
Fast Switching Diode
Maximum Ratings and Thermal Characteristics
(T_A=25^oC unless otherwise noted.)
Parameter
Symbol
Limit
Unit
Peak reverse voltage
Maximum average rectified current
Maximum power dissipation at T =25^oC
amb
Maximum junction temperature
V_RM
50
Volts
I
F(AV)
200
mA
P
500
mW
tot
T_J
175
o_C
Electrical Characteristics
(T_J=25^oC unless otherwise noted.)
Parameter
Symbol
Forward voltage drop
V_F
Reverse current
I_R
Reverse recovery time
t_rr
Test Condition
I_F=200mA
V_R=50V
I =I =10mA to 200mA
FR
to 0.1I_F
Min.
Typ.
Max.
Unit
-
-
1.0
Volt
-
-
100
nA
-
-
4.0
ns
618