UTV005 Datasheet, PDF (1/3 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

UTV005
0.5 Watt, 20 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 005 is a COMMON EMITTER transistor capable of providing 0.5
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
8.0 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
45 Volts
3.5 Volts
4 Volts
0.75 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150^oC
+ 200^oC
CASE OUTLINE
55FT, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
IMD¹
VSWR₁
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 20 Volts
Ic = 220 mA
Pref = 0.5 Watts
F = 860 MHz
0.5
Watts
.05 Watts
11
dB
-60
dB
30:1
BVceo Collector to Emitter Breakdown Ic = 20 mA
24
Volts
BVces Collector to Base Breakdown
Ic = 10 mA
45
Volts
BVebo Emitter to Base Breakdown
Ie = 1 mA
3.5
Volts
h_FE
Current Gain
Cob
Output Capacitance
Vce = 5 V, 100 mA
20
Vcb = 20 V, F = 1 MHz
5.0
pF
θjc
Thermal Resistance
Tc = 25^oC
22
o_C/W
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 MHz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120