TPR175 Datasheet, PDF (1/3 Pages) Advanced Semiconductor – NPN SILICON RF-MICROWAVE POWER TRANSISTOR

TPR 175
175 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 175 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
388 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
3.5 Volts
12.5 Amps
- 65 to + 150^oC
+ 200^oC
CASE OUTLINE
55CX, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
175
Watts
25 Watts
8.0 9.0
dB
40
%
00:1
BVebo
BVces
h_FE
θjc²
Emitter to Base Breakdown
Ie = 5 mA
3.5
Collector to Emitter Breakdown Ic = 20 mA
55
DC - Current Gain
Ic = 20 mA, Vce = 5V 10
Thermal Resistance
Volts
Volts
0.45 ^oC/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue A February 1998
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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