TPR1000 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz

TPR 1000
1000 Watts, 45 Volts, Pulsed
Avionics 1090 MHz
GENERAL DESCRIPTION
The TPR 1000 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1090 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input returns for fast rise time. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
2900 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
65 Volts
3.5 Volts
80 Amps
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55KV, Style 1
Common Base
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
η_c
t_r
VSWR¹
Power Out
Power Input
Power Gain
Collector Efficiency
Rise Time
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 45 Volts
PW = 10 µsec
DF = 1%
F = 1030 MHz
MIN
1000
6.0
TYP
43
MAX UNITS
Watts
250 Watts
dB
%
70
ns
9:1
Bvebo^3,4
BVces⁴
h_FE4
θjc²
Emitter to Base Breakdown
Ie = 50mA
3.5
Collector to Emitter Breakdown Ic = 100mA
65
DC - Current Gain
Ic = 1000mA, Vce = 5 V 10
Thermal Resistance
Volts
Volts
0.06 ^oC/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
4: Per Side
Issue A June 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120