TAN250A Datasheet, PDF (1/3 Pages) Advanced Semiconductor – RF POWER TRANSISTOR

TAN 250A
250 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN 250A is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
575 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
60 Volts
4.0 Volts
30 Amps
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 20 µsec
DF = 5%
F = 1090 MHz
250
60
6.0
7.0
40
5:1
Watts
Watts
dB
%
BVebo
Emitter to Base Breakdown
Ie = 20 mA
4.0
BVces
Collector to Emitter Breakdown Ic = 25 mA
60
h_FE
C - Current Gain
θjc²
Thermal Resistance
Ic = 1A, Vce = 5V
10
See Chart
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue B, July 1997
Volts
Volts
o_C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120