TAN150 Datasheet, PDF (1/2 Pages) GHz Technology – 150 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

TAN150
150 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN150 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
583 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
3.5 Volts
15 Amps
- 65 to + 150^oC
+ 200^oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 20 µsec
DF = 5%
F = 1090 MHz
150
Watts
30
Watts
7.0
dB
38
%
10:1
BVebo
BVces
h_FE
θjc²
Emitter to Base Breakdown
Ie = 10 mA
3.5
Collector to Emitter Breakdown Ic = 50 mA
55
DC - Current Gain
I c= 50 mA, Vce = 5 V 10
Thermal Resistance
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Volts
Volts
0.3 ^oC/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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