MDS400 Datasheet, PDF (1/1 Pages) GHz Technology – 400 Watts Pk, 45 Volts, 32us, 2% Avionics 1030-1090 MHz

MDS400
400 Watts Pk, 45 Volts, 32µs, 2%
Avionics 1030-1090 MHz
GENERAL DESCRIPTION
The MDS400 is a COMMON BASE transistor capable of providing 400 Watts
Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor
includes double input prematching for full broadband capability. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
1450 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Collector to Base Voltage
Ic
Collector Current
55 Volts
4.0 Volts
40 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-40 to + 200C
+ 200C
CASE OUTLINE
55KT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
Po
Pin
Pg
h
VSWR¹
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F =1030/1090 MHz
Vcc = 45 Volts
Pulse Width = 32s
Duty Factor = 2 %
At Rated Power
MIN TYP MAX UNITS
400
Watts
90
Watts
6.5
dB
35
%
10:1
BVces
BVebo
H _fe
Rθjc
Collector to Emitter Breakdown Ic = 50 mA
55
Emitter to Base Breakdown
Ie = 30 mA
3.5
Current Gain
Vce = 5 V, Ic = 1 A
10
Thermal Resistance
Tc = 25 ^oC
Issue September 22, 1995
Volts
Volts
0.12 ^oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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