JTDA150A Datasheet, PDF (1/3 Pages) GHz Technology – 145 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz

JTDA 150A
145 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDA-150A is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces
junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
350 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
50 Volts
3.5 Volts
15 Amps
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55KT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 36 Volts
PW = Note 1
DF = Note 1
F = 1215 MHz
145
Watts
24 Watts
8
dB
45
%
3:1
BVebo
Emitter to Base Breakdown
Ie = 20 mA
3.5
BVces
Collector to Emitter Breakdown Ic = 60 mA
55
h_FE
DC - Current Gain
θjc²
Thermal Resistance
Ic = 5.0A, Vce = 5 V
20
Volts
Volts
0.5 ^oC/W
Note 1: JTIDS Pulse = 7 Micorseconds On / Off for 3.3 Millisec, 22 % Long term duty
2: At rated pulse conditions
Issue June 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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