23A017 Datasheet, PDF (1/2 Pages) GHz Technology – 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz

23A017
1.7 Watts, 20 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The 23A017 is a COMMON EMITTER transistor capable of providing 1.7
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
6.0 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
800 mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55BT, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 2.3 GHz
1.7 2.2
Ic = 280 mA
Vcc = 20 Volts
6.25 7.6
Vce = 20V, Ic =280 mA 3.4 3.7
Watts
.38 Watts
dB
GHz
9:1
BVebo Emitter to Base Breakdown
Ie = 2 mA
3.5
Volts
BVces
Collector to Emitter Breakdown Ic = 20 mA
50
Volts
BVceo
Collector to Emitter Breakdown Ic = 20 mA
22
Volts
h_FE
DC Current Gain
Cob
Capacitance
Vce = 5 V, Ic = 200 mA 20
Vcb = 28V, f = 1 MHz
4.8
pF
θjc
Thermal Resistance
14
16
o_C/W
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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