23A003 Datasheet, PDF (1/1 Pages) GHz Technology – 0.3 Watts, 15 Volts, Class A Linear to 2300 MHz

23A003
0.3 Watts, 15 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The23A003 is a COMMON EMITTER transistor capable of providing 0.3
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
3.0 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
0.3 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55BT, STYLE 2
B08
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 2.3 GHz
Ic = 100 mA
Vcc = 15 Volts
Vce = 15V, Ic =100 mA
MIN
0.3
10.0
4.2
TYP
11.0
4.5
MAX UNITS
Watts
0.03
Watts
dB
GHz
10:1
BVebo
Emitter to Base Breakdown
Ie = 2 mA
3.5
BVces
Collector to Emitter Breakdown Ic = 20 mA
50
BVceo
Collector to Emitter Breakdown Ic = 20 mA
20
h_FE
DC Current Gain
Cob
Capacitance
θjc
Thermal Resistance
Vce = 5 V, Ic = 100 mA 20
Vcb = 20V, f = 1 MHz
2.5
45
Volts
Volts
Volts
pF
o_C/W
Initial Issue November 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120