2324-12L Datasheet, PDF (1/2 Pages) GHz Technology – 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz

2324-12L
12 Watts - 20 Volts, Class C
Microwave 2300 - 2400 MHz
GENERAL DESCRIPTION
The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts
of Class C, RF output power over the band 2300-2400 MHz. This transistor is
specifically designed for Microwave Broadband Class C amplifier
applications. It includes input and output pre matching and utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
44 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
40 Volts
3.5 Volts
3.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2.3 - 2.4 GHz
12
Vcc = 20 Volts
Po = 12 Watts
6.8
As Above
F=2.3 GHz, Pin =2.5W
Watts
2.5
Watts
dB
40
%
10:1
BVebo
BVces
H_fe
Cob
θjc
Emitter to Base Breakdown
Ie= 10 mA
3.5
Collector to Emitter Breakdown Ic = 50mA
45
DC Current Gain
Vce=5V, Ic=1A
10
Output Capacitance*
F=1 MHz, Vcb=24V
Thermal Resistance
*Not measureable due to internal prematch network
Issue August 1996
Volts
Volts
4.0 ^oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120