2301 Datasheet, PDF (1/3 Pages) GHz Technology – 1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

2301
1.5 Watt - 20 Volts, Class C
Microwave 2300 MHz
GENERAL DESCRIPTION
The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts
Class C, RF output power at 2300 MHz. Gold metalization and diffused
ballasting are used to provide high reliability and supreme ruggedness. The
transistor uses a fully hermetic High Temperature Solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
5.6 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
45 Volts
3.5 Volts
0.3 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55 BT- Style 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
η_c
VSWR₁
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2.3 GHz
Vcb = 20 Volts
Po = 1.5 Watts
As Above
F = 2.3 GHz, Po = 1.5 W
MIN
1.5
8.0
TYP MAX UNITS
Watt
0.24 Watt
dB
40
%
30:1
BVces
BVebo
h_FE
Cob
θjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ie = 1.0 mA
Vce = 5 V, Ic = 100 mA
F = 1.0 MHz, Vcb = 22V
Issue August 1996
45
Volts
3.5
Volts
10
4.0
pF
31
o_C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120