2010 Datasheet, PDF (1/3 Pages) GHz Technology – 10 Watt - 28 Volts, Class C Microwave 2000 MHz

2010
10 Watt - 28 Volts, Class C
Microwave 2000 MHz
GENERAL DESCRIPTION
The 2010 is a COMMON BASE transistor capable of providing 10 Watts
Class C, RF output power at 2000 MHz. Gold metalization and diffused
ballasting are used to provide high reliability and supreme ruggedness. The
transistor uses a fully hermetic High Temperature Solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
30 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
2.0 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55BT-1, Style
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
η_c
VSWR₁
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2 GHz
Vcb = 28 Volts
Po= 10 Watts
As Above
F = 2 GHz, Po = 10 W
MIN
10
7.0
TYP MAX UNITS
Watt
2
Watt
8.0
dB
40
%
20:1
BVces
BVcbo
BVebo
Icbo
h_FE
Cob
θjc
Collector to Emitter Breakdown Ic = 20 mA
50
Collector to Base Breakdown Ic = 4 mA
45
Emitter to Base Breakdown
Ie = 4 mA
3.5
Collector to Base Current
Vcb = 28 Volts
Current Gain
Vce = 5 V, Ic = 400 mA
20
Output Capacitance
Thermal Resistance
F = 1 MHz, Vcb = 28 V
Issue August 1996
Volts
Volts
Volts
4.0
mA
pF
6.0
o_C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120