English
Language : 

1719-35 Datasheet, PDF (1/2 Pages) GHz Technology – 35 Watt - 28 Volts, Class C Microwave 1725 - 1850 MHz
1719-35
35 Watt - 28 Volts, Class C
Microwave 1725 - 1850 MHz
Preliminary Issue
GENERAL DESCRIPTION
The 1719-35 is a COMMON BASE transistor capable of providing 35 Watts
of Class C, RF output power over the band 1725 -1850 MHz. This transistor is
designed for Microwave Broadband Class C, HIGH EFFICIENCY amplifier
applications. It includes Input and Output prematching and utilizes Gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a Low Inductance Flange Mount, Ceramic
sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
97 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
12 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55AR, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR1
Power Out
F = 1725 -1850 MHz
35
Power Input
Vcb = 28 Volts
Power Gain
Pin = 6.23 Watts
7.5
Collector Efficiency
As Above
45
Load Mismatch Tolerance F = 1850MHz, Pin = 6.23W
Watt
6.23 Watt
8.0
dB
50
%
4.5:1
BVces
Collector to Emitter Breakdown Ic = 20 mA
50
BVebo
Emitter to Base Breakdown
Ie = 15 mA
3.5
HFE
Current Gain
Cob
Output Capacitance
θjc
Thermal Resistance
Vce = 5 V, Ic = 1 A
10
F = 1 MHz, Vcb = 28V
72045
Initial Issue April 1996
Volts
Volts
100
pF
1.8
oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120