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1214-55 Datasheet, PDF (1/3 Pages) GHz Technology – 55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
1214 - 55
55 Watts - 28 Volts, Pulsed
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-55 is an internally matched, COMMON BASE transistor capable
of providing 55 Watts of pulsed RF output power at two milliseconds pulse
width, twenty percent duty factor across the band 1200 to 1400 MHz. This
hermetically solder-sealed transistor is specifically designed for L-Band radar
applications. It utilizes gold metalization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
175 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
8 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1200-1400 MHz
55
Vcc = 28 Volts
Pulse Width = 2 ms
6.5
Duty = 20 %
F=1300MHz, Po=55W
12.3
7.0
45
3:1
Watts
Watts
dB
%
BVces
Collector to Emitter Breakdown Ic =100 mA
50
Volts
BVebo Emitter to Base Breakdown
Ie = 15 mA
3.5
Volts
Hfe
DC Current Gain
Vce = 5 V,Ic = 1000 mA 20
45
θjc
Thermal Resistance
Rated Pulse Condition
1.0 oC/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120