1214-30 Datasheet, PDF (1/3 Pages) GHz Technology – 30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz

1214-30
30 Watts, 28 Volts, Pulsed
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-30 is an internally matched, COMMON BASE transistor capable of
providing 30 Watts of pulsed RF output power at two milliseconds pulse
width, twenty percent duty factor across the band 1200 to 1400 MHz. This
hermetically solder-sealed transistor is specifically designed for long pulse
radar applications. It utilizes gold metalization and diffused emitter ballasting
to provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
88 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
4.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1200-1400 MHz 30
Vcc = 28 Volts
Pulse Width = 2 ms
7.0
Duty = 20%
Rated Conditions
Watts
6.0
Watts
dB
48
%
3:1
BVces
BVebo
Hfe
Cob
θjc
Collector to Emitter Breakdown Ic = 50 mA
50
Emitter to Base Breakdown
Ie = 5 mA
3.5
DC Current Gain
Vce=5 V, Ic =500mA 20
Output Capacitance*
F=1 MHz, Vcb=28V
Thermal Resistance
Rated Pulse Condition
* Not measureable due to internal prematch network
IssueA July 1997
Volts
Volts
pF
2.0
o_C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120