10AM11 Datasheet, PDF (1/3 Pages) GHz Technology – 11 Watts, 20 Volts, Class A Linear to 1000 MHz

10AM11
11 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10AM11 is a COMMON EMITTER transistor capable of providing 11
Watts of Class A, RF output power to1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
41 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
4.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to +150^oC
+200^oC
CASE OUTLINE
55CX, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 1.0 GHz
11.0 14.0
Watts
Ic = 1.8 A
1.55 Watts
Vcc = 20 Volts
8.5 9.0
dB
Vce = 20 V, Ic =1.8 A 2.0 2.5
GHz
30:1
BVebo
BVces
BVceo
H _FE
Cob
θjc
Emitter to Base Breakdown
Ie = 12 mA
3.5
Collector to Emitter Breakdown Ic = 120 mA
50
Collector to Emitter Breakdown Ic = 120 mA
24
DC Current Gain
Vce = 5 V, Ic = 800 mA 20
Output Capacitance
Vcb = 28V, f =1.0 MHz
Thermal Resistance
Volts
Volts
Volts
20
pF
2.5 4.25 ^oC/W
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120