10AM05 Datasheet, PDF (1/3 Pages) GHz Technology – 5.0 Watts, 20 Volts, Class A Linear to 1000 MHz

10AM05
5.0 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10AM05 is a COMMON EMITTER transistor capable of providing 5
Watts of Class A, RF output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
25 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
3.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150^oC
+ 200^oC
CASE OUTLINE
55CX, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 1.0 GHz
Ic = 1.0 A
Vcc =20 Volts
Vce = 20 V, Ic =1 A
5.0
Watts
.63 Watts
9.0
10
dB
2.0 2.5
GHz
30:1
BVebo Emitter to Base Breakdown
Ie = 6.0 mA
3.5
Volts
BVces
Collector to Emitter Breakdown Ic = 60 mA
50
Volts
BVceo
Collector to Emitter Breakdown Ic = 60 mA
24
Volts
h_FE
DC Current Gain
Vce = 5 V, Ic = 400 mA 20
Cob
Output Capacitance
Vcb = 20V, f =1.0 MHz
16.0
pF
θjc
Thermal Resistance
5
7.0 ^oC/W
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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