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0912-7 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Intemally Matched, Common Base Transistor
0912-7
7 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The 0912-7 is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 960-1215 MHz. The transistor
includes input prematch for broadband capability. The device has gold thin-
film metallization for proven highest MTTF. Low thermal resistance
package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
50 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
60 Volts
4.0 Volts
1.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150 oC
+ 200oC
CASE OUTLINE
55CX, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency (1090 MHz)
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 10 µsec
DF =1%
F = 1090 MHz
MIN
7
8.5
TYP MAX UNITS
Watts
1
Watts
dB
40
%
10:1
BVebo Emitter to Base Breakdown
Ie = 10 mA
4
BVces
Collector to Emitter Breakdown Ic = 20 mA
60
Cob
Capacitance Collector to Base
Vcb = 50 V
hFE
θjc 2
DC - Current Gain
Thermal Resistance
Ic= 100 mA, Vcc= 5V 10
Note1: At Rated Power Output and pulse conditions.
2: At rated pulse conditions
Issue A February 20, 1998
Volts
Volts
6.5
8
pF
120
3.5 oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120