ESJC50F12_16 Datasheet, PDF (2/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 450mA 12kV 100nS--High voltage silicon rectifier diode

ESJC50F12
450mA 12kV 100nS--High voltage silicon rectifier diode
Fig 1
Forward Current Derating Curve
Fig 2
Reverse Recovery Measurement Waveform
This applies to most diodes in our catalog that show average
current rating at 55°C unless otherwise specified.
Max operating temperature is 150°C unless otherwise
specified.
Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
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