RFC4K Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 0.2A 2kV~4kV 500nS--High voltage fast recovery rectifier diode

RFC2K THRU RFC4K
0.2A 2kV~4kV 500nS--High voltage fast recovery rectifier diode
HVGT high voltage silicon rectifier diodes is
made of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
SHAPE DISPLAY:
FEATURES:
1. Fast switching.
2. Low leakage .
3. High surge capability .
4. Conform to RoHS.
5. High current capability.
APPLICATIONS:
SIZE: (Unit:mm)
HVGT
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-202E, Method 208
Polarity: Color band denotes cathode end
Mounting Position: Any.
Weight: 0.29 grams.
MAXIMUM RATINGS AND CHARACTERISTICS: (@ TA= 25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
NAME:
DO-41
Characteristic
Symbols RFC2K RFC3K RFC4K Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Output Current (Note 1)
@ TL = 50°C
Non-Repetitive Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage
@ IF= 200mA
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
@ TA=25°C
@ TA=100°C
Typical Junction Capacitance (Note 2)
Maximum Reverse Recovery Time (Note 3)
VRRM
VRWM
VR
VR(RSM)
IO
IFSM
VFM
IRM
CJ
TRR
2000
3000
4000
V
1400
2100
2800
V
200
mA
30
A
4.0
5.0
6.5
V
5.0
uA
100
30
pF
500
nS
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Test Conditions: IF = 0.5A, IR = 1.0A, IRR = 0.25A
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