R3000 Datasheet, PDF (1/2 Pages) Rugao Dachang Electronics Co., Ltd – High Voltage Rectifier Reverse Voltage 3000V Forward Current 0.5A

R3000 THRU R5000
200mA 3000V~5000V--High voltage silicon rectifier diode
HVGT high voltage silicon rectifier diodes is
made of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
SHAPE DISPLAY:
FEATURES:
1. Low cost .
2. Low leakage .
3. Low forward voltage drop .
4. Conform to RoHS.
5. High current capability.
APPLICATIONS:
SIZE: (Unit:mm)
HVGT
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
Case: JEDEC DO-15 molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any.
Weight:0.014 ounce, 0.40 grams.
MAXIMUM RATINGS AND CHARACTERISTICS: (@ TA= 25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
NAME:
DO-15
Characteristic
Symbols R3000 R4000 R5000 Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
VR
3000
4000
5000
V
VR(RSM)
2100
2800
3500
V
Average Output Current (Note 1) @ TL = 50°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ IF= 200mA
IO
200
mA
IFSM
30
A
VFM
4.0
5.0
V
Peak Reverse Leakage Current at Rated DC Blocking Voltage
IRM
5.0
uA
Typical Junction Capacitance (Note 2)
CJ
30
pF
Typical Thermal Resistance Junction to Ambient
RΘJA
117
K/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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