R2000F_16 Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 200mA 2.0kV 500nS-HIGH VOLTAGE DIODE

R2000F
200mA 2.0kV 500nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
*Fast switching
*Low leakage
*High reliability
*High current capability
*High surge capability
Applications
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.3 gram
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings :
HVRG2TKF
DO-41 Series
Lead Diameter 0.9mm
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
.034(0.9) _DIA
.028(0.7)
1.0(25.4)
MIN
.107(2.7) _DIA
.080(2.0)
Items
Repetitive Peak Renerse Voltage
Symbols
V RRM
Ta=25°C,
Condition
R2000F
2.0
Units
kV
Average Output Current
IO
Ta=25°C,Resistive Load
200
mA
Suege Current
I FSM
Ta=25°C,8.3 ms
30
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
125
°C
-65 to +175
°C
R2000F
2.0
Units
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
5.0
uA
IR2
at 100°C,V R =VRRM
100
uA
Maximum Reverse Recovery Time
Trr
at 25°C; I F =0.5A; I R =1.0A; Irr =0.25A;
500
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
6.0
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
E-mail: [e-mail]
China Tel: [phone]
Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
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