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JB99 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES
HVCATM
JB99
20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES
JB99 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 4.2
o 0.8
25 min.
15
25 min.
Cathode Mark
Type
Mark
JB99
JB99
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO
Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
JB99
20
20
1.0
155
120
-40 to +155
Units
kV
mApeak
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
IR2
at 100°C,V R =VRRM
Maximum Reverse Recovery Time
Trr
at 25°C
JB99T
40
3.0
30
100
Units
V
uA
uA
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
1.0
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com
2012