HVRW2_17 Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 1.5A 2.0kV 150nS -High Voltage High Current Diodes

HVRW2
1.5A 2.0kV 150nS -High Voltage High Current Diodes
HVGT high voltage silicon rectifier diodes is
made of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency .
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
6. Fast Recovery.
APPLICATIONS:
1. High voltage multiplier circuit
2. High current and high voltage circuit.
3. General purpose high voltage rectifier.
4. Medical X-ray machine HV power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.1 grams (approx).
SIZE: (Unit:mm)
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
HVGT NAME: DO-990
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
Ta=25°C;
2.0
kV
Average Output Current
IF
Ta=55°C; Resistive Load
1500
mA
Suege Current
IFSM
Ta=25°C; 1/2 Sine(60Hz) ; 8.3mS
200
A
Junction Temperature
TJ
-40~+150
°C
Allowable Operation Case Temperature
Tc
125
°C
Storage Temperature
TSTG
-40~+150
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C;IF =IF(AV)
IR1
at 25°C;VR =VRRM
IR2
at 100°C;VR =VRRM
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ
at 25°C; VR=0V; f=1MHz
Data value Units
4.0
V
10
uA
100
uA
150
nS
52
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [e-mail]
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