HVRT200_17 Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 30mA 20kV 100nS--High voltage silicon rectifier diode

HVRT200
30mA 20kV 100nS--High voltage silicon rectifier diode
HVGT high voltage silicon rectifier diodes is
made of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency .
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT NAME: DO-312
APPLICATIONS:
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.45 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
VRRM
Average Output Current
IF
Suege Current
IFSM
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Ta=25°C;
Ta=55°C;Resistive Load
Ta=25°C; 1/2 Sine(60Hz)
Data Value Units
20
kV
30
mA
3.0
A
-40~+125
°C
125
°C
-40~+125
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C; at IF(AV)
IR1
at 25°C; at VRRM
IR2
at 100°C; at VRRM
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ
at 25°C; VR=0V; f=1MHz
Data value Units
35
V
1.0
uA
20
uA
100
nS
1.0
pF
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