HVR5510U08 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 1.0A 8kV 75nS--High Current Rectifiers Ultra Fast Recovery

HVR5510U08
1.0A 8kV 75nS--High Current Rectifiers Ultra Fast Recovery
HVGT High voltage silicon rectifier is made of
high quality glass passivated chip and high reliability
epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency design..
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
6. Ultra Fast Recovery.
APPLICATIONS:
1. High frequency switching power supply.
2. Power supply of laser equipment .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: external lead.
3. Net weight: 11 grams (approx).
SIZE: (Unit:mm)
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
HVGT NAME: HVR-101255H
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
Average Output Current
IF
Suege Current
IFSM
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Ta=25°C;
8.0
kV
Ta=25°C;Resistive Load
1.0
A
Ta=25°C;8.3 mS; 1/2 Sine(60Hz)
45
A
-40~+125
°C
125
°C
-40~+125
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C; at 100mA
IR1
at 25°C;VR =VRRM
IR2
at 100°C;VR =VRRM
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ
at 25°C; VR=0V; f=1MHz
Data value Units
11
V
10
uA
100
uA
75
nS
8.3
pF
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