HVG3A300 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 3.0A 30kV 80nS--High voltage silicon rectifier stack

HVG3A300
3.0A 30kV 80nS--High voltage silicon rectifier stack
HVGT high voltage bridge rectifier is made of
high quality glass passivated chip and high reliability
epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency.
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. High voltage power supply for mechanical
equipment..
2. Power supply of laser equipment.
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: built-in M5 nut.
3. Net weight: 490grams (approx).
SIZE: (Unit:mm)
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
HVGT NAME: HVC-205825
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
Average Output Current
IO
Suege Current
IFSM
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Ta=25°C;
Ta=25°C; Resistive Load
Ta=25°C; 8.3 mS
30.0
kV
3.0
A
60.0
A
-40~+125
°C
125
°C
-40~+125
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C;IF =IF(AV)
IR1
at 25°C;VR =VRRM
IR2
at 100°C;VR =VRRM
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ
at 25°C; VR=0V; f=1MHz
Data value Units
36
V
5.0
uA
50.0
uA
80.0
nS
--
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [e-mail]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:[phone] FAX:[phone]
2016 1 / 1