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HVC10F Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 10kV 200mA HIGH VOLTAGE DIODES
HVCATM
HVC10F
10kV 200mA HIGH VOLTAGE DIODES
HVC10F is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
RoHS corresponding products
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 3.0
o 0.6
26 min.
10
26 min.
Cathode Mark
Type
Mark
HVC10F
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO
Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
HVC10F
10
200
20
125
120
-40 to +125
Units
kV
mA
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
IR2
at 100°C,V R =VRRM
Maximum Reverse Recovery Time
Trr
at 25°C
HVC10F
20
5.0
50
80
Units
V
uA
uA
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com
2012