HV55G30_16 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 55mA 30kV 100nS-High Voltage Power Diodes

HV55G30
55mA 30kV 100nS-High Voltage Power Diodes
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching
VVVV
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
Voltage doubler circuit
DO-312 Series
Lead Diameter 0.6mm
Microwave emission power
3.0mm
General purpose high voltage rectifier,
Voltage multiplier assembly.
27mm
12mm
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Symbols
Condition
HV55G30
Units
Repetitive Peak Renerse Voltage
V RRM
Ta=25°C, IR =0.1mA
30
kV
Average Output Current
IO
Ta=25°C,Resistive Load
55
mA
Suege Current
I FSM
Ta=25°C,8.3msec, half sine
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C, at: IF
3.0
125
125
-40 to +125
A peak
°C
°C
°C
HV55G30
48
Units
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
1.0
uA
Maximum Reverse Recovery Time
IR2
at 100°C,V R =VRRM
Trr
at 25°C; I F =0.5IR; I R =IF(AV); Irr =0.25IR
10
uA
100
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
0.8
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
E-mail: [e-mail]
China Tel: [phone]
Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
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