HV55G15_16 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 55mA 15kV 100nS-High Voltage Power Diodes

HV55G15
55mA 15kV 100nS-High Voltage Power Diodes
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
DO-312 Series
Lead Diameter 0.6mm
27mm
12mm
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Ta=25°C, IR =0.1mA
Average Output Current
IO
Ta=25°C,Resistive Load
3.0mm
HV55G15
15
55
Units
kV
mA
Suege Current
I FSM
Ta=25°C,8.3msec, half sine
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C, at: IF
3.0
125
125
-40 to +125
A peak
°C
°C
°C
HV55G15
35
Units
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
1.0
uA
Maximum Reverse Recovery Time
IR2
at 100°C,V R =VRRM
Trr
at 25°C; I F =0.5IR; I R =IF(AV); Irr =0.25IR
10
uA
100
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
0.5
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
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Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
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