HV10G06_16 Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 10mA 6.0kV 100nS-HIGH VOLTAGE DIODE

HV10G06
10mA 6.0kV 100nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
Voltage doubler circuit
DO-308 Series
Lead Diameter 0.5mm
Microwave emission power
3.0mm
General purpose high voltage rectifier,
Voltage multiplier assembly.
25mm
8.0mm
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Symbols
V RRM
Ta=25°C,
Condition
HV10G06
6.0
Units
kV
Average Output Current
IO
Ta=25°C,Resistive Load
10
mA
Suege Current
I FSM
Ta=25°C,8.3 ms
1.0
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
125
°C
-40 to +125
°C
HV10G06
20
Units
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
2.0
uA
IR2
at 100°C,V R =VRRM
5.0
uA
Maximum Reverse Recovery Time
Trr
at 25°C; I F =2mA; I R =4mA; Irr =1mA;
100
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
1.0
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
E-mail: [e-mail]
China Tel: [phone]
Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
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