HV-T72_16 Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 5mA 10kV 80nS-HIGH VOLTAGE DIODE

HV-T72
5mA 10kV 80nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
T72
DO-210 Series
Lead Diameter 0.6mm
26mm
10mm
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Ta=25°C,
Average Output Current
IO
Ta=25°C,Resistive Load
2.5mm
HV-T72
10
5.0
Units
kV
mA
Suege Current
I FSM
Ta=25°C,8.3 ms
0.5
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
125
°C
-40 to +125
°C
HV-T72
36
Units
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
2.0
uA
Maximum Reverse Recovery Time
IR2
at 100°C,V R =VRRM
Trr
at 25°C; I F =2mA; I R =4mA; Irr =1mA;
5.0
uA
80
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
1.0
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
E-mail: [e-mail]
China Tel: [phone]
Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
01