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GT-FOB Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 8kV 500mA HIGH VOLTAGE DIODE
HVCATM
GT-FOB
8kV 500mA HIGH VOLTAGE DIODE
GE-FOB is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 7.0
o 1.2
20 min.
22
20 min.
Cathode Mark
Type
Mark
GT-FOB
FOB
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO
Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
GT-FOB
8
500
30
155
125
-40 to +155
Units
kV
mA
Apeak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF=IF(AV)
Maximum Reverse Current
IR1
at 25°C,VR=VRRM
IR2
at 100°C,VR=VRRM
Maximum Reverse Recovery Time
Trr
at 25°C
GT-FOB
14
1.0
10
50
Units
V
µA
µA
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
-
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com
2012