ESJC60S10 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 600mA 10kV -High Voltage Power Diodes

ESJC60S10
600mA 10kV -High Voltage Power Diodes
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
HEVSGJCT60S10
X light Power supply
Laser
Voltage doubler circuit
DO-722 Series
Lead Diameter 1.2mm
Microwave emission power
7.5mm
General purpose high voltage rectifier,
Voltage multiplier assembly.
24mm
22mm
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Symbols
Condition
ESJC60S10 Units
Repetitive Peak Renerse Voltage
V RRM
Ta=25°C, IR =0.1mA
10
kV
Average Output Current
IO
Ta=25°C,Resistive Load
0.6
A peak
Suege Current
I FSM
Ta=25°C,8.3msec, half sine
30
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C, at: IF
125
°C
-40 to +125
°C
ESJC60S10
12
Units
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
5.0
uA
Maximum Reverse Recovery Time
IR2
at 100°C,V R =VRRM
Trr
at 25°C; I F =0.5IR; I R =IF(AV); Irr =0.25IR
50
uA
--
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
--
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
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China Tel: [phone]
Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
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