ESJC50-08 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – High speed switching

HVGT
ESJC50-08
8.0kV 500mA HIGH VOLTAGE DIODE
ESJC50-08 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 7.5
o 1.28
20 min.
22
20 min.
DO-721
Cathode Mark
Type
Mark
ESJC50-08
HVGT
ESJC50-08
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO
Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
ESJC50-08
8.0
500
50
125
125
-40 to +125
Units
kV
mA
Apeak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF=IF(AV)
Maximum Reverse Current
IR1
at 25°C,VR=VRRM
IR2
at 100°C,VR=VRRM
Maximum Reverse Recovery Time
Trr
at 25°C
ESJC50-08
15
1.0
10
50
Units
V
µA
µA
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
-
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:[e-mail]
2014