ESJA53-18_17 Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 5.0mA 18kV 80nS--HIGH VOLTAGE RECTIFIER DIODES

ESJA53-18
5.0mA 18kV 80nS--HIGH VOLTAGE RECTIFIER DIODES
HVGT High voltage silicon rectifier diodes is made of
high quality glass passivated chip and high reliability
epoxy resin sealing structure, and through professional
testing equipment inspection qualified after to
customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency .
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT NAME: DO-312
APPLICATIONS:
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.32 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
VRRM
Average Output Current
IF
Suege Current
IFSM
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Ta=25°C;
Ta=25°C;Resistive Load
Ta=25°C; 1/2 Sine(60Hz)
Data Value Units
18
kV
5.0
mA
0.5
A
-40~+125
°C
125
°C
-40~+125
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C; at IF(AV)
IR1
at 25°C; at VRRM
IR2
at 100°C; atVRRM
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ
at 25°C; VR=0V; f=1MHz
Data value Units
50
V
2.0
uA
5.0
uA
80
nS
1.0
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [e-mail]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:[phone] FAX:[phone]
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