BR2F Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 2.0kV 1.0A HIGH VOLTAGE DIODES

HVCA^TM
BR2F
2.0kV 1.0A HIGH VOLTAGE DIODES
BR2F is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 5.0
o 1.28
27 min.
9.0
27 min.
Cathode Mark
Type
Mark
BR2F
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO
Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
BR2F
2.0
1.0
40
155
125
-40 to +155
Units
kV
A peak
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
IR2
at 100°C,V R =VRRM
Maximum Reverse Recovery Time
Trr
at 25°C
BR2F
9.0
5.0
50
150
Units
V
uA
uA
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:[e-mail]
2012