2CLG50KV0.1A Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 0.1A 50kV 80nS--High voltage silicon rectifier stack

2CLG50KV/0.1A
0.1A 50kV 80nS--High voltage silicon rectifier stack
HVGT High voltage silicon rectifier is made
of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment
inspection qualified after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency design..
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT NAME: HVS-080960H
APPLICATIONS:
1. High frequency switching power supply.
2. Power supply of laser equipment .
3. General purpose high voltage rectifier.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: external lead.
3. Net weight: 7.0 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
VRRM
Average Output Current
IF
Suege Current
IFSM
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Ta=25°C;
Ta=25°C;Resistive Load
Ta=25°C;8.3 mS
Data Value Units
50
kV
100
mA
3.0
A
-40~+125
°C
125
°C
-40~+125
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C;IF =IF(AV)
IR1
at 25°C;VR =VRRM
IR2
at 100°C;VR =VRRM
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ
at 25°C; VR=0V; f=1MHz
Data value Units
60
V
5.0
uA
50
uA
80
nS
--
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [e-mail]
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